Qingzhou Xu

Education

• Ph.D., Materials Science and Engineering, University of California, Irvine
• M.S., Materials Science and Engineering, Beijing University of Science and Technology, China
• B.S., Materials Science and Engineering, Harbin Institute of Technology, China

Profile

Dr. Qingzhou Xu received a bachelor's degree in materials science and engineering from the Harbin Institute of Technology in China in 1989. He earned a master's degree in materials science and engineering from the Beijing University of Science and Technology in 1992 and his Ph.D.  in materials science and engineering from the University of California, Irvine in 2000. He has worked as an engineer at the Chinese Academy of Science Mechanics Institute in Beijing, China and the Chinese National Engineering Center of Composites in Beijing, China and the RF Integrated Corporation in California. His early study and work experience include structural materials (light alloys and refractory metals), engineering functional materials (hard/soft magnetic materials, hydrogen-storage materials for rechargeable batteries and non-lead soldering materials) and thin films. His recent study and work experience are mainly on semiconductor materials and processing, III-V compound device passivation, high-speed transistor (HBTs and HEMTs) processing and characterization, micro-electro-mechanical systems (MEMS), magnetostatic actuators and electrostatic switches, nanolithography and nano-devices. His current interests focus on using materials science knowledge to solve the reliability issues in the areas of RF MEMS switches (thin-film stress control, reliable switch contacts and novel switch architecture with enhanced reliability) and III-V compound transistors (high-performance ohmic contacts and device passivation) as well as developing novel nano-layered and nanostructured materials. He has first-authored more than 20 journal and conference papers.